IC-grade monocrystalline silicon

TYPE SPECIFICATION

characterizing range of ingot parameters

p-type Boron doped ingot


Item Parameter Unit Value
1 Growth method CZ
2 Diameter mm 42.5 - 200
3 Type / Dopant P / Boron
4 Resistivity Ohm•cm 0.005 ~ 60
5 Resistivity variation, not more % 10
6 Crystalographic orientation (100), (111) ±1°
7 Primary flat
Orientation Length
mm If required (to be specified)
8 Secondary flat
rientation Length
mm If required (to be specified)
9 Carbon content, not more at/cm3 5•1016
10 Oxygen content, not more* at/cm3 9•1017
11 Minority carriers life time, not less (at resistivity more than 1.0 Ohm•cm) µсек 10
12 Dislocation density, not more pcs/cm2 10
13 OISF pcs/cm2 If required (to be specified)
14 Ingot length mm 100 - 800
15 Packaging The proper package which will provide for ingots integrity during transportation (polyethylene film, foam pencil cases, carton boxes on the pallet)
Notes:
1. The Producer and Supplier is PJSC “Semiconductor plant”, Zaporozhye, Ukraine.
2. Feedstock is own CVD IC-grade polycrystalline chunks.
3. All the parameters are measured according to ASTM (SEMI) standards.
4. Another parameters required by customer can be agreed.
5. The ingots with diameters up to 100 mm and resistivity more than 3 Ohm•cm can be annealed, if required.
* СOxygen content for ingots with diameter 150-200 mm is ≤ 1•1018.

Information in PDF format



n-type Phosphorus doped ingot


Item Parameter Unit Values range
1 Growth method CZ
2 Diameter mm 42.5 - 150
3 Type / Dopant N / Phosphorus
4 Resistivity Ohm•cm 0.015 ~ 50
5 Resistivity variation, not more % 15 - 20
6 Crystalographic orientation (100), (111) ±1°
7 Primary flat
Orientation Length
mm If required (to be specified)
8 Secondary flat
Orientation Length
mm If required (to be specified)
9 Carbon content, not more at/cm3 5•1016
10 Oxygen content, not more at/cm3 9•1017
11 Minority carriers life time, not less (at resistivity more than 1.0 Ohm•cm) µсeк 10
12 Dislocation density, not more pcs/cm2 10
13 OISF pcs/cm2 В случае необходимости (подлежит уточнению)
14 Ingot length mm 100 - 800
15 Packaging The proper package which will provide for ingots integrity during transportation (polyethylene film, foam pencil cases, carton boxes on the pallet)
Notes:
1. The Producer and Supplier is PJSC “Semiconductor plant”, Zaporozhye, Ukraine.
2. Feedstock is own CVD IC-grade polycrystalline chunks.
3. All the parameters are measured according to ASTM (SEMI) standards.
4. Another parameters required by customer can be agreed including ingot diameter.
5. The ingots with diameters up to 100 mm and resistivity more than 3 Ohm•cm can be annealed, if required.

Information in PDF format



n-type Antimony doped ingot

Item Parameter Unit Values range
1 Growth method CZ
2 Diameter mm 76 - 150
3 Type / Dopant N / Antimony
4 Resistivity Ohm•cm 0.0065 ~ 0.02
5 Resistivity variation, not more* % 30
6 Crystalographic orientation (100), (111) ±1°
7 Primary flat
Orientation Length
mm If required (to be specified)
8 Secondary flat
Orientation Length
mm If required (to be specified)
9 Carbon content, not more at/cm3 N/A
10 Oxygen content, not more at/cm3 N/A
11 Boron content, not more at/cm3 5 •1014
12 Dislocation density, not more pcs/cm2 10
13 Ingot length mm 100 - 800
14 Packaging The proper package which will provide for ingots integrity during transportation (polyethylene film, foam pencil cases, carton boxes on the pallet)
Notes:
1. The Producer and Supplier is PJSC “Semiconductor plant”, Zaporozhye, Ukraine.
2. Feedstock is own CVD IC-grade polycrystalline chunks.
3. All the parameters are measured according to ASTM (SEMI) standards.
4. Another parameters required by customer can be agreed including ingot diameter.
5. Boron content is typically less than 7,5*1013 cm-3. This parameter is ensured by polycrystalline silicon quality and internal laboratory researches.
* Resistivity variation is not more 15% for ingots with diameter up to 150 mm and orientation (100).

Information in PDF format



n-type Arsenic doped ingot

Item Parameter Unit Values range
1 Growth method CZ
2 Diameter mm 76 - 150
3 Type / Dopant N / Arsenic
4 Resistivity Ohm•cm 0.001 ~ 0.02
5 Resistivity variation, not more % 20
6 Crystalographic orientation (100), (111) ±1°
7 Primary flat
Orientation Length
mm If required (to be specified)
8 Secondary flat
Orientation Length
mm If required (to be specified)
9 Carbon content, not more at/cm3 N/A
10 Oxygen content, not more at/cm3 N/A
11 Boron content, not more at/cm3 5 •1014
12 Dislocation density, not more pcs/cm2 10
13 Ingot length mm 100 - 800
14 Packaging The proper package which will provide for ingots integrity during transportation (polyethylene film, foam pencil cases, carton boxes on the pallet)
Notes:
1.The Producer and Supplier is PJSC “Semiconductor plant”, Zaporozhye, Ukraine.
2.Feedstock is own CVD IC-grade polycrystalline chunks.
3.All the parameters are measured according to ASTM (SEMI) standards.
4.Another parameters required by customer can be agreed including ingot diameter.
5.Boron content is typically less than 5*1013 см-3. This parameter is ensured by polycrystalline silicon quality and internal laboratory researches.

Information in PDF format